Photoluminescence of ZnO nanowires dependent on O2 and Ar annealing

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 10, 2008, Pages 2453-2456

  Ha, Byeongchul ^a   Ham, Heon ^b   Lee, Cheol Jin ^c  

^a Chongju University   (South Korea)

^b VIKO System Co Ltd   (South Korea)

^c Korea University   (South Korea)

Author keywords

A. Nanostructures; A. Optical materials; D. Defects; D. Luminescence; D. Optical properties

Indexed keywords

ARGON; ELECTRIC WIRE; INERT GASES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SILICON; ZINC ALLOYS; ZINC OXIDE;

A. NANOSTRUCTURES; A. OPTICAL MATERIALS; D. DEFECTS; D. LUMINESCENCE; D. OPTICAL PROPERTIES;

LIGHT EMISSION;

EID: 51049099585     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2008.04.041     Document Type: Article

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