Structural and luminescent properties of bulk InAsSb

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 2, 2012, Pages

  Sarney, W L ^a   Svensson, S P ^a   Hier, H ^a   Kipshidze, G ^b   Donetsky, D ^b   Wang, D ^b   Shterengas, L ^b   Belenky, G ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ANTIMONIDES; INDIUM ARSENIDE;

ALLOY SYSTEM; BANDGAP BOWING; INAS; LONG WAVE INFRARED; LONG-WAVELENGTH-RANGE; LUMINESCENT PROPERTY; METAMORPHIC BUFFER LAYER; MISFIT STRAINS; PHOTO DETECTION; SPECTRAL RANGE;

GALLIUM ALLOYS;

EID: 84861619002     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3670749     Document Type: Article

References (9)

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