Emission properties of carbon nanowalls on porous silicon

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 2, 2012, Pages

  Evlashin, Stanislav A ^a   Mankelevich, Yuri A ^a   Borisov, Vladimir V ^a   Pilevskii, Andrey A ^a   Stepanov, Anton S ^a   Krivchenko, Victor A ^a   Suetin, Nikolai V ^a   Rakhimov, Alexander T ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ION BOMBARDMENT; POROUS SILICON;

CARBON NANOSTRUCTURES; CARBON NANOWALLS; CARBON STRUCTURES; DC DISCHARGES; EMISSION PROPERTIES; HIGH CURRENT DENSITIES; MULTI-LAYER CARBON NANOTUBES; NANOCRYSTALLINE CARBON; P-TYPE; PHOTO-ELECTROCHEMICAL ETCHING; POROUS SILICON SUBSTRATES; PRE-TREATMENT; RF DISCHARGE; SILICON SAMPLES; SILICON SUBSTRATES; SUBSTRATE PRETREATMENT; SUBSTRATE SURFACE;

CARBON FIBERS;

EID: 84861610423     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3681287     Document Type: Article

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