The effect of the type of doping on the electrical characteristics of electrolyte-oxide-silicon sensors: PH sensing and polyelectrolyte adsorption

Sensors and Actuators, B: Chemical

Volumn 168, Issue , 2012, Pages 207-213

  Garyfallou, Goulielmos Z ^a   De Smet, Louis C P M ^a   Sudhölter, Ernst J R ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Dopant; Electrolyte oxide semiconductor; Impedance spectroscopy; Layer by layer; Polyelectrolytes

Indexed keywords

DEPOSITED LAYER; EFFECT OF PH; ELECTRICAL CHARACTERISTIC; ELECTRICAL RESPONSE; ELECTROLYTE SOLUTIONS; ELECTROLYTE-OXIDE-SEMICONDUCTOR; HIGHLY SENSITIVE; IMPEDANCE SPECTROSCOPY; LAYER-BY-LAYER ADSORPTION; LAYER-BY-LAYERS; METHODOLOGICAL APPROACH; P-TYPE SILICON; PH SENSING; POLYANIONS; POLYCATIONS; POLYELECTROLYTE ADSORPTION; POLYELECTROLYTE MULTILAYER; SINGLE-STRANDED DNA; SPACE CHARGE REGIONS;

ADSORPTION; CAPACITANCE; DNA; DOPING (ADDITIVES); ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; PH EFFECTS; SEMICONDUCTOR DOPING; SILICON OXIDES;

POLYELECTROLYTES;

EID: 84861575556     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2012.04.010     Document Type: Article

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