Comparison of the properties of porous silicon films with different back contacts (Ag, Al) for possible photovoltaic applications

Solar Energy Materials and Solar Cells

Volumn 91, Issue 15-16, 2007, Pages 1510-1514

  Priyanka, ^a   Sharma, Shailesh N ^a   Salam, Samsher ^b   Husain, Mushahid ^c   Lal, Mohan ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b TEZPUR UNIVERSITY   (India)

^c JAMIA MILLIA ISLAMIA CENTRAL UNIVERSITY   (India)

Author keywords

Back contacts (Ag, Al); Eutectic temperature; Porous silicon; Screen printing

Indexed keywords

BACK CONTACTS; EUTECTIC TEMPERATURE; PHOTOVOLTAIC APPLICATIONS; POROUS SILICON FILMS;

ALUMINUM; ANODIC OXIDATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PHOTOLUMINESCENCE; PHOTOVOLTAIC CELLS; SCREEN PRINTING; SILVER; THIN FILMS;

POROUS SILICON;

EID: 34447254058     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2007.04.004     Document Type: Article

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