Study of the breakdown failure mechanisms for power AlGaN/GaN HEMTs implemented using a RF compatible process

Microelectronics Reliability

Volumn 52, Issue 6, 2012, Pages 964-968

  Xie, Gang ^a,b   Xu, Edward ^a   Zhang, Bo ^b   Ng, Wai Tung ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; COMPATIBLE PROCESS; DECREASING FUNCTIONS; ELECTRICAL CHARACTERISTIC; FAILURE MECHANISM; FIELD PLATES; GATE CURRENT; GATE LENGTH; GATE TUNNELING; SEMI-INSULATING; SIC SUBSTRATES; STRESS TEST; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENT; THERMAL-ANNEALING;

DEGRADATION; DRAIN CURRENT; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; NEGATIVE TEMPERATURE COEFFICIENT; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84861530648     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.11.022     Document Type: Article

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