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Volumn 8326, Issue , 2012, Pages

Technological merits, process complexity, and cost analysis of self-aligned multiple patterning

Author keywords

Mandrel; Octuple (SAOP) patterning; Quadruple (SAQP); Self aligned double (SADP); Self aligned multiple patterning (SAMP); Sextuple (SASP); Spacer; Triple (SATP)

Indexed keywords

MANDREL; OCTUPLE (SAOP) PATTERNING; QUADRUPLE (SAQP); SELF-ALIGNED; SEXTUPLE (SASP); SPACER; TRIPLE (SATP);

EID: 84861499903     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.916490     Document Type: Conference Paper
Times cited : (54)

References (7)
  • 1
    • 84861493332 scopus 로고    scopus 로고
    • Self-aligned frequency tripling technology: Cost-effective 20nm line/space (half pitch) patterning using 193nm dry lithography
    • June
    • Y. Chen, X, Xu, Y. M. Chen, L. Miao, "Self-aligned frequency tripling technology: cost-effective 20nm line/space (half pitch) patterning using 193nm dry lithography," Applied Materials ET Conference, June, 2009.
    • (2009) Applied Materials et Conference
    • Chen, Y.1    Xu, X.2    Chen, Y.M.3    Miao, L.4
  • 6
    • 84875149562 scopus 로고    scopus 로고
    • Mandrel and spacer engineering based self-aligned triple patterning
    • Y. Chen, Q. Cheng, W. Kang, "Mandrel and spacer engineering based self-aligned triple patterning," SPIE Advanced Lithography, 2012.
    • SPIE Advanced Lithography , vol.2012
    • Chen, Y.1    Cheng, Q.2    Kang, W.3
  • 7
    • 45449086042 scopus 로고    scopus 로고
    • 22nm half-pitch patterning by CVD spacer self alignment double patterning (SADP)
    • C. Bencher, Y. M. Chen, H. Dai, W. Montgomery, L. Huli, "22nm Half-Pitch Patterning by CVD Spacer Self Alignment Double Patterning (SADP)", Proc. SPIE Vol. 6924, 69244E, 2008.
    • (2008) Proc. SPIE , vol.6924
    • Bencher, C.1    Chen, Y.M.2    Dai, H.3    Montgomery, W.4    Huli, L.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.