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Volumn 7973, Issue , 2011, Pages

Self-aligned triple patterning for continuous IC scaling to half-pitch 15nm

Author keywords

LER; Mandrel core; Satp mandrel recession (SMR); Self aligned quadruple patterning (SAQP); Self aligned triple patterning (SATP); Spacer

Indexed keywords

LER; MANDREL/CORE; SATP MANDREL RECESSION (SMR); SELF-ALIGNED; SPACER;

EID: 79959236953     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.881645     Document Type: Conference Paper
Times cited : (27)

References (5)
  • 2
    • 84878597222 scopus 로고    scopus 로고
    • Self-aligned frequency tripling technology: Cost-effective 20nm line/space (half pitch) patterning using 193nm dry lithography
    • June
    • Y. Chen, X, Xu, Y. M. Chen, L. Miao, "Self-aligned frequency tripling technology: cost-effective 20nm line/space (half pitch) patterning using 193nm dry lithography, " Applied Materials ET Conference, June, 2009.
    • (2009) Applied Materials ET Conference
    • Chen, Y.1    Xu, X.2    Chen, Y.M.3    Miao, L.4
  • 4
    • 45449086042 scopus 로고    scopus 로고
    • 22nm half-pitch patterning by CVD Spacer Self Alignment Double Patterning (SADP)
    • C. Bencher, Y. M. Chen, H. Dai, W. Montgomery, L. Huli, "22nm Half-Pitch Patterning by CVD Spacer Self Alignment Double Patterning (SADP)", Proc. SPIE Vol. 6924, 69244E, 2008.
    • (2008) Proc. SPIE , vol.6924
    • Bencher, C.1    Chen, Y.M.2    Dai, H.3    Montgomery, W.4    Huli, L.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.