Sidewall spacer quadruple patterning for 15nm half-pitch

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7973, Issue , 2011, Pages

  Xu, Ping ^a   Chen, Yongmei ^a   Chen, Yijian ^a   Miao, Liyan ^a   Sun, Shiyu ^a   Kim, Sung Woo ^a   Berger, Ami ^b   Mao, Daxin ^a   Bencher, Chris ^a   Hung, Raymond ^a   Ngai, Chris ^a  

^a APPLIED MATERIALS INC   (United States)

^b Applied Materials Inc Israel   (Israel)

Author keywords

15nm half pitch; Quadruple patterning; SADP; SAQP; Self aligned double patterning; Sub 16nm half pitch

Indexed keywords

15NM HALF-PITCH; QUADRUPLE PATTERNING; SADP; SAQP; SELF-ALIGNED; SUB-16NM HALF-PITCH;

FLASH MEMORY; LAKES; MEASUREMENTS; PHOTOLITHOGRAPHY; SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS;

AMORPHOUS SILICON;

EID: 79959280600     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.881547     Document Type: Conference Paper

References (2)

1. Christopher Bencher et al, "22nm Half-Pitch Patterning by CVD Spacer Self Alignment Double Patterning (SADP)". Proc. SPIE Vol. 6924, 69244E. (2008).
2. Andrew J. Hazelton et al. "Double Patterning Requirements for Optical Lithography and Prospects for Optical Extension without Double Patterning", Proc. Of SPIE Vol. 6924. 69240R. (2008).