Analysis of leakage current in GaAs/AlGaAs buried-heterostructure lasers with a semi-insulating GaInP:Fe burying layer

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2506-2517

  Barrios, C Angulo ^a   Lourdudoss, S ^a   Martinsson, H ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BURIED HETEROSTRUCTURES; CURRENT MECHANISMS; GAAS/ALGAAS; GAINP; HOLE BLOCKING LAYERS; HOLE INJECTION; PLANAR CONFIGURATIONS; POTENTIAL PROFILES; SEMI-INSULATING; TRAP CONCENTRATION; TRAP DENSITY;

ELECTROLUMINESCENCE; GALLIUM ARSENIDE; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84861430976     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1498955     Document Type: Article

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