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Journal of Electronic Materials

Volumn 30, Issue 8, 2001, Pages 987-991

Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP:Fe and GaAs:Fe

(6) Angulo Barrios, C a Rodriguez Messmer, E a Holmgren, M b Risberg, A c Halonen, J d Lourdudoss, S a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

b Rinkebyv 17 (Sweden)

c Mitel Semiconductor AB (Sweden)

d CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

Hydride vapor phase epitaxy; Semi insulating materials; Semiconductor lasers

Indexed keywords

ETCHING; HETEROJUNCTIONS; IRON; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY (HVPE);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035416264 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/BF02657722 Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.