Effect of anodization time on photoluminescence of porous thin SiC layer grown onto silicon

Journal of Luminescence

Volumn 126, Issue 2, 2007, Pages 561-565

  Keffous, A ^a   Bourenane, K ^a   Kechouane, M ^b   Gabouze, N ^a   Kerdja, T ^c   Guerbous, L ^d   Lafane, S ^c  

^a L'Unite de Developpement de la Technologie du Silicium   (Algeria)

^b UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

^c CENTRE DE DÉVELOPPEMENT DES TECHNOLOGIES AVANCÉES   (Algeria)

^d CENTRE DE RECHERCHE NUCLÉAIRE D ALGER   (Algeria)

Author keywords

PLD; PSC; Silicon; Silicon carbide; Thin layer

Indexed keywords

CRYSTAL GROWTH; ELECTROLYTES; ETCHING; GLYCOLS; MASS SPECTROMETRY; PHOTOLUMINESCENCE; POROUS MATERIALS; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON; X RAY DIFFRACTION;

BAND EMISSION; ETHYLENE GLYCOL ELECTROLYTE; P-TYPE PSC LAYERS; SPUTTERED TARGET;

SILICON CARBIDE;

EID: 34249036396     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2006.10.024     Document Type: Article

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