High frequency inversion capacitance measurements for 6H-SiC n-MOS capacitors from 450 to 600 °C

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 739-742

  Ghosh, Ruby N ^a   Loloee, Reza ^a   Isaacs Smith, Tamara ^b   Williams, John R ^b  

^a MICHIGAN STATE UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

Author keywords

Bulk carrier generation; High temperature; Inversion capacitance; MOS capacitor

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; DIELECTRIC DEVICES; METALS; OXIDE SEMICONDUCTORS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS;

BULK CARRIER; CAPACITOR STRUCTURES; DEPLETION APPROXIMATION; ELECTRICAL CHARACTERISTIC; HIGH TEMPERATURE; HIGH-TEMPERATURE ENVIRONMENT; INVERSION CAPACITANCE; METAL OXIDE SEMICONDUCTOR;

MOS CAPACITORS;

EID: 63849103211     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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