SCOPUS 정보 검색 플랫폼

Volumn 159, Issue 6, 2012, Pages

Optimization of oxygen annealing process to increase the work function of Mo/Ti or Cu/Ti film by inserting partially oxidized thin layer at surface region

(2) Yun, Dong Jin a Rhee, Shi Woo b

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL TOOL; ANNEALING CONDITION; ANNEALING PROCESS; ANNEALING TEMPERATURES; BONDING STATE; BULK PROPERTIES; CRYSTALLINITIES; FILM PROPERTIES; METAL ATOMS; METAL ELECTRODES; METAL FILM; OXIDATION REACTIONS; OXYGEN ANNEALING; OXYGEN GAS; SURFACE REGION; THIN LAYERS;

BINDING ENERGY; OPTIMIZATION; OXYGEN; RAPID THERMAL ANNEALING; SURFACE PROPERTIES; WORK FUNCTION;

METAL ANALYSIS;

EID: 84861414862 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/2.048206jes Document Type: Article

Times cited : (5)

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