Review and critique of analytic models of MOSFET short-channel effects in subthreshold

IEEE Transactions on Electron Devices

Volumn 59, Issue 6, 2012, Pages 1569-1579

  Xie, Qian ^a   Xu, Jun ^a   Taur, Yuan ^b  

^a TSINGHUA UNIVERSITY   (China)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Modeling; MOSFETs; scale length; short channel effect

Indexed keywords

2-D NUMERICAL SIMULATION; ANALYTIC MODELS; ANALYTIC SOLUTION; CHANNEL LENGTH; DIELECTRIC REGIONS; EMPIRICAL EXPRESSION; EXPONENTIAL DEPENDENCE; GATE INSULATOR; GENERALIZED SCALE; MAIN GROUP; MOS-FET; MOSFET SCALE LENGTH; MOSFETS; MULTIPLE GATES; POISSON'S EQUATION; POLYNOMIAL POTENTIAL; PREDICTIVE ABILITIES; SCALE LENGTH; SHORT-CHANNEL EFFECT; SUBTHRESHOLD;

MODELS; MOSFET DEVICES; POISSON EQUATION; POLYNOMIALS;

ANALYTICAL MODELS;

EID: 84861348377     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2191556     Document Type: Review

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