High performance thin-film transistors using moderately aligned semiconducting single-wall carbon nanotubes

Physica Status Solidi (B) Basic Research

Volumn 248, Issue 11, 2011, Pages 2692-2696

  Fujii, Shunjiro ^a,b   Tanaka, Takeshi ^a   Nishiyama, Satoko ^a   Kataura, Hiromichi ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Carbon nanotubes; Field effect transistors; Semiconducting single wall carbon nanotubes; Thin film

Indexed keywords

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CARBON NANOTUBES; FIELD EFFECT TRANSISTORS; FILM PREPARATION; NANOTUBES; SILICA; SILICON; SINGLE-WALLED CARBON NANOTUBES (SWCN); SUBSTRATES; THIN FILM CIRCUITS; THIN FILMS;

AGAROSE GEL; DRYING PROCESS; ON/OFF RATIO; THIN-FILM TRANSISTOR (TFTS); TRANSFER CHARACTERISTICS;

THIN FILM TRANSISTORS;

EID: 84861313811     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201100254     Document Type: Article

References (28)

1. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and P. Avouris, Appl. Phys. Lett. 73, 2447 (1998).
2. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature 393, 49 (1998).
3. Q. Cao and J. A. Rogers, Adv. Mater. 21, 29 (2009).
4. M. Shiraishi, T. Takenobu, T. Iwai, Y. Iwasa, H. Kataura, and M. Ata, Chem. Phys. Lett. 394, 110 (2004).
5. E. S. Snow, P. M. Campbell, M. G. Ancona, and J. P. Novak, Appl. Phys. Lett. 86, 033105 (2005).
6. M. Engel, J. P. Small, M. Steiner, M. Freitag, A. A. Green, M. C. Hersam, and P. Avouris, ACS Nano 2, 2445 (2008).
7. C. Wang, J. Zhang, K. Ryu, A. Badmaev, L. G. De Arco, and C. Zhou, Nano Lett. 9, 4285 (2009).
8. Y. Asada, Y. Miyata, Y. Ohno, R. Kitaura, T. Sugai, T. Mizutani, and H. Shinohara, Adv. Mater. 22, 2698 (2010).
9. H. Okimoto, T. Takenobu, K. Yanagi, Y. Miyata, H. Shimotani, H. Kataura, and Y. Iwasa, Adv. Mater. 22, 3981 (2010).
10. S. Y. Lee, S. W. Lee, S. M. Kim, W. J. Yu, Y. W. Jo, and Y. H. Lee, ACS Nano 5, 2369 (2011).
11. M. C. LeMieux, M. Roberts, S. Barman, Y. W. Jin, J. M. Kim, and Z. Bao, Science 321, 101 (2008).
12. T. Tanaka, H. Jin, Y. Miyata, S. Fujii, H. Suga, Y. Naitoh, T. Miyadera, T. Minari, K. Tsukagoshi, and H. Kataura, Nano Lett. 9, 1497 (2009).
13. X. N. Ho, L. N. Ye, S. V. Rotkin, Q. Cao, S. Unarunotai, S. Salamat, M. A. Alam, and J. A. Rogers, Nano Lett. 10, 499 (2010).
14. J. Zhao, C. Lin, W. Zhang, Y. Xu, C. W. Lee, M. B. Chan-Park, P. Chen, and L.-J. Li, J. Phys. Chem. C 115, 6975 (2011).
15. C. Wang, J. Zhang, and C. Zhou, ACS Nano 4, 7123 (2010).
16. Y. Miyata, K. Shiozawa, Y. Asada, Y. Ohno, R. Kitaura, T. Mizutani, and H. Shinohara, Nano Res., DOI: 10.1007/ s12274-011-0152-7 (2011).
17. C. Kocabas, N. Pimparkar, O. Yesilyurt, S. J. Kang, M. A. Alam, and J. A. Rogers, Nano Lett. 7, 1195 (2007).
18. A. Behnam, J. Guo, and A. Ural, J. Appl. Phys. 102, 044313 (2007).
19. T. Tanaka, Y. Urabe, D. Nishide, and H. Kataura, Appl. Phys. Express 2, 125002 (2009).
20. Y. Miyata, K. Yanagi, Y. Maniwa, and H. Kataura, J. Phys. Chem. C 112, 13187 (2008).
21. P. Vichchulada, Q. Zhang, A. Duncan, and M. D. Lay, ACS Appl. Mater. Interfaces 2, 467 (2010).
22. S. Fujii, T. Tanaka, Y. Miyata, H. Suga, Y. Naitoh, T. Minari, T. Miyadera, K. Tsukagoshi, and H. Kataura, Appl. Phys. Express 2, 071601 (2009).
23. P. G. Collins, K. Bradley, M. Ishigami, and A. Zettl, Science 287, 1801 (2000).
24. W. Kim, A. Javey, O. Vermesh, O. Wang, Y. M. Li, and H. J. Dai, Nano Lett. 3, 193 (2003).
25. J. Hedberg, L. Dong, and J. Jiao, Appl. Phys. Lett. 86, 143111 (2005).
26. N. Rouhi, D. Jain, K. Zand, and P. J. Burke, Adv. Mater. 23, 94 (2011).
27. M. D. Lay, J. P. Novak, and E. S. Snow, Nano Lett. 4, 603 (2004).
28. M. C. LeMieux, S. Sok, M. E. Roberts, J. P. Opatkiewicz, D. Liu, S. N. Barman, N. Patil, S. Mitra, and Z. Bao, ACS Nano 3, 4089 (2009).