Performance enhancement of thin-film transistors by using high-purity semiconducting single-wall carbon nanotubes

Applied Physics Express

Volumn 2, Issue 7, 2009, Pages

  Fujii, Shunjiro ^a   Tanaka, Takeshi ^a   Miyata, Yasumitsu ^a   Suga, Hiroshi ^a   Naitoh, Yasuhisa ^a   Minari, Takeo ^a   Miyadera, Tetsuhiko ^a   Tsukagoshi, Kazuhito ^a,b   Kataura, Hiromichi ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGAROSE GEL; AMINOSILANES; ELECTRICAL BREAKDOWN; HIGH-PURITY; ON/OFF CURRENT RATIO; ON/OFF RATIO; PERFORMANCE ENHANCEMENTS; RANDOM NETWORK; SELF-ASSEMBLY; SINGLE-WALL CARBON NANOTUBES; SUBSTRATE SURFACE; TRANSFER CHARACTERISTICS; TWO-DIMENSIONAL NETWORKS;

CARBON NANOTUBES; CENTRIFUGATION; EXTRACTION; FABRICATION; GELATION; MONOLAYERS; SEMICONDUCTING ORGANIC COMPOUNDS; SINGLE-WALLED CARBON NANOTUBES (SWCN); THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; TWO DIMENSIONAL;

SUBSTRATES;

EID: 68249111640     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.071601     Document Type: Article

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