An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition

Nanotechnology

Volumn 23, Issue 23, 2012, Pages

  Subannajui, Kittitat ^a,b   Güder, Firat ^a   Danhof, Julia ^c   Menzel, Andreas ^a   Yang, Yang ^a   Kirste, Lutz ^c   Wang, Chunyu ^c   Cimalla, Volker ^c   Schwarz, Ulrich ^c   Zacharias, Margit ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b MAHIDOL UNIVERSITY   (Thailand)

^c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; ADVANCED FABRICATION; DRY ETCHING TECHNIQUES; ELECTRICAL CHARACTERIZATION; ELECTRONIC APPLICATION; FABRICATION TECHNIQUE; MICROPHOTOLUMINESCENCE; NANO-DEVICES; NANOMANIPULATORS; P-TYPE SI; PHASE SHIFT LITHOGRAPHY; POLYCRYSTALLINE; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SI WAFER; SILICON SUBSTRATES; UV LUMINESCENCE; ZNO FILMS; ZNO NANOWIRE ARRAYS; ZNO NANOWIRES; ZNO NWS;

AMORPHOUS MATERIALS; FABRICATION; LUMINESCENCE; NANOWIRES; OPTICAL PROPERTIES; SILICON; SILICON WAFERS; ZINC OXIDE;

ATOMIC LAYER DEPOSITION;

NANOMATERIAL; SILICON; ZINC OXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; ELECTRIC CONDUCTIVITY; ELECTROPLATING INDUSTRY; MACROMOLECULE; MATERIALS TESTING; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

ELECTRIC CONDUCTIVITY; ELECTROPLATING; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; SEMICONDUCTORS; SILICON; SURFACE PROPERTIES; ZINC OXIDE;

EID: 84861302900     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/23/235607     Document Type: Article

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