Orientations of polycrystalline ZnO at the buried interface of oxide thin film transistors (TFTs): A grazing incidence x-ray diffraction study

Bulletin of the Korean Chemical Society

Volumn 29, Issue 4, 2008, Pages 727-728

  Kim, J Y ^a   Park, S H Ko ^b   Jeong, H Y ^a   Park, C ^a   Choi, S Y ^b   Choi, J Y ^c   Han, S H ^a   Yoon, T H ^a  

^a Hanyang University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Grazing incidence x ray diffraction; Thin film transistors; ZnO

Indexed keywords

EID: 44149125281     PISSN: 02532964     EISSN: 12295949     Source Type: Journal    
DOI: 10.5012/bkcs.2008.29.4.727     Document Type: Article

References (5)