GaN-based LEDs with Ar plasma treatment

Materials Science in Semiconductor Processing

Volumn 15, Issue 1, 2012, Pages 52-55

  Kuo, D S ^a   Lam, K T ^b   Wen, K H ^b   Chang, S J ^a   Ko, T K ^c   Hon, S J ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FUZHOU UNIVERSITY   (China)

^c EPISTAR CORPORATION   (Taiwan)

Author keywords

Ar plasma treatment; Current spreading; GaN; LED

Indexed keywords

AR PLASMA TREATMENT; CURRENT INJECTIONS; CURRENT SPREADING; FORWARD VOLTAGE; GAN; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; INJECTED CARRIERS; INJECTION CURRENTS; OUTPUT POWER;

GALLIUM ALLOYS; GALLIUM NITRIDE; PLASMA THEORY;

LIGHT EMITTING DIODES;

EID: 84861189143     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2011.08.004     Document Type: Article

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