Electrochemistry of nanocrystalline 3C silicon carbide films

Chemistry - A European Journal

Volumn 18, Issue 21, 2012, Pages 6514-6519

  Yang, Nianjun ^a   Zhuang, Hao ^b   Hoffmann, René ^a   Smirnov, Waldemar ^a   Hees, Jakob ^a   Jiang, Xin ^b   Nebel, Christoph E ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b UNIVERSITY OF SIEGEN   (Germany)

Author keywords

electrochemistry; nanostructures; silicon carbide; surface chemistry; thin films

Indexed keywords

3C-SIC FILMS; DOUBLE-LAYER CAPACITANCE; ELECTROCHEMICAL ACTIVITIES; ELECTROCHEMICAL GRAFTING; ELECTRODE MATERIAL; ELECTRODE PROCESS; FERROCENES; GRAIN SIZE; HIGH FREQUENCY HF; NANOCRYSTALLINES; NONAQUEOUS SOLUTIONS; POTENTIAL WINDOWS; REDOX PROBE; SILICON CARBIDE FILMS; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPY;

ELECTROCHEMICAL ELECTRODES; ELECTROCHEMISTRY; IRON COMPOUNDS; NANOSTRUCTURES; ORGANOMETALLICS; PROBES; SILICON CARBIDE; SURFACE CHEMISTRY; SURFACE ROUGHNESS; THIN FILMS;

GRAFTING (CHEMICAL);

EID: 84861156419     PISSN: 09476539     EISSN: 15213765     Source Type: Journal    
DOI: 10.1002/chem.201103765     Document Type: Article

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