Ion implanted boron emitter N-silicon solar cells with wet oxide passivation

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 001058-001060

  Ho, W S ^a   Huang, Y H ^a   Hsu, W W ^a   Chen, Y Y ^a   Liu, C W ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITION; ANNEALING TIME; DRY OXIDATION; FURNACE ANNEALING; IMPLANTED DOPANTS; ION IMPLANTED; SOLAR CELL PROCESSING; SURFACE PASSIVATION; WET OXIDATION;

ANTIREFLECTION COATINGS; OPEN CIRCUIT VOLTAGE; OXIDATION RESISTANCE; PHOTOVOLTAIC EFFECTS; SILICON SOLAR CELLS;

RAPID THERMAL ANNEALING;

EID: 84861076123     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186134     Document Type: Conference Paper

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