Metallic precipitate contribution to generation and recombination currents in p-n junction devices due to the Schottky effect

Journal of Applied Physics

Volumn 94, Issue 8, 2003, Pages 5064-5070

  Negoita, M D ^a   Tan, T Y ^a  

^a Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; SEMICONDUCTING SILICON;

SCHOTTKY EFFECT;

SEMICONDUCTOR JUNCTIONS;

EID: 0242367187     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1611289     Document Type: Article

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