Effect of Oxygen Admittance Temperature on the Growth of ZnO Microcrystals by Thermal Evaporation Technique

Journal of Materials Science and Technology

Volumn 28, Issue 4, 2012, Pages 317-320

  Srivatsa, K M K ^a   Chhikara, Deepak ^a   Kumar, M Senthil ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

Room temperature photoluminescence; Scanning electron microscopy; Thermal evaporation; Transmission electron microscopy; ZnO microcrystals

Indexed keywords

BAND EMISSION; EFFECT OF OXYGEN; EMISSION PEAKS; GREEN-BAND EMISSION; OXYGEN AMBIENT; OXYGEN GAS; REACTOR TEMPERATURES; ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA; ROOM-TEMPERATURE PHOTOLUMINESCENCE; THERMAL EVAPORATION TECHNIQUE; ULTRA-VIOLET; ZNO;

ATMOSPHERIC PRESSURE; OXYGEN; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; THERMAL EVAPORATION; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

MICROCRYSTALS;

EID: 84860756111     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1005-0302(12)60061-9     Document Type: Article

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