A back-illuminated Au/ZnO/Al Shottky UV photodetector

Faguang Xuebao/Chinese Journal of Luminescence

Volumn 31, Issue 4, 2010, Pages 527-530

  Zhao, Yan Min ^a,b   Zhang, Ji Ying ^a   Zhang, Xi Yan ^c   Shan, Chong Xin ^a   Yao, Bin ^a   Zhao, Dong Xu ^a   Zhang, Zhen Zhong ^a   Li, Bing Hui ^a   Shen, De Zhen ^a   Fan, Xi Wu ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Au ZnO Al vertical structure; Back illuminated; UV photodetector

Indexed keywords

AU ELECTRODES; BACK-ILLUMINATED; CUTOFF WAVELENGTHS; DEVICE STRUCTURES; DIRECT BAND GAP; ELECTRONIC DEVICE; EXCITONIC BINDING; HALL MEASUREMENTS; HIGH EFFICIENCY; HIGH QUALITY; I - V CURVE; INCIDENT LIGHT; METAL SEMICONDUCTOR METAL; ORDER OF MAGNITUDE; PEAK RESPONSIVITY; POTENTIAL APPLICATIONS; RADIO FREQUENCY MAGNETRON SPUTTERING; RECTIFYING EFFECT; REJECTION RATIOS; ROOM TEMPERATURE; SCHOTTKY; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SINGLE-PHOTON DETECTORS; ULTRA-VIOLET; UTILIZATION EFFICIENCY; UV DETECTION; UV DETECTOR; UV EMISSIONS; UV OPTOELECTRONICS; UV PHOTODETECTORS; VERTICAL STRUCTURES; VERTICAL-TYPE; WIDE-BAND-GAP SEMICONDUCTOR; ZNO; ZNO FILMS;

ALUMINUM; BINDING ENERGY; DISTILLATION; ELECTRIC CONTACTORS; ELECTRON DEVICES; ENERGY GAP; FABRICATION; GOLD; LIGHT REFLECTION; METAL DETECTORS; METALLIC FILMS; OHMIC CONTACTS; OPTOELECTRONIC DEVICES; PARTICLE BEAMS; PHOTODETECTORS; PHOTOLITHOGRAPHY; PHOTONS; SAPPHIRE; SCHOTTKY BARRIER DIODES; SURFACE STRUCTURE; WET ETCHING;

ZINC OXIDE;

EID: 77957779532     PISSN: 10007032     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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