Biepitaxial growth of high-quality semiconducting NiO thin films on (0001) Al 2O 3 substrates: Microstructural characterization and electrical properties

Crystal Growth and Design

Volumn 12, Issue 5, 2012, Pages 2495-2500

  Lee, Ju Ho ^a   Kwon, Yong Hun ^b   Kong, Bo Hyun ^c   Lee, Jeong Yong ^a   Cho, Hyung Koun ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC MODELING; ATOMIC SCALE; BIEPITAXIAL; CRYSTALLINITIES; CRYSTALLOGRAPHIC ORIENTATION RELATIONSHIPS; HIGH QUALITY; INTER-ATOMIC DISTANCES; MICRO-STRUCTURAL CHARACTERIZATION; MICROSTRUCTURAL CHARACTERISTICS; NIO THIN FILM; OUT-OF-PLANE; OXYGEN ATOM; P-TYPE; RADIO FREQUENCY MAGNETRON SPUTTERING; STACKING SEQUENCE; SUBSTRATE TEMPERATURE;

ALUMINUM; ATOMS; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; SEMICONDUCTOR GROWTH; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

SUBSTRATES;

EID: 84860478458     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg3001174     Document Type: Article

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