High aspect ratio deep silicon etching

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2012, Pages 251-254

  Owen, K J ^a   VanDerElzen, B ^a   Peterson, R L ^a   Najafi, K ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP REACTIVE ION ETCHING; DEEP SILICON ETCHING; HIGH ASPECT RATIO; PROCESS PRESSURE; SILICON TRENCH; SWITCHING TIME; ULTRA-HIGH;

ETCHING; MEMS;

ASPECT RATIO;

EID: 84860428658     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2012.6170138     Document Type: Conference Paper

References (8)

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4. W. J. Park, et al., "High aspect ratio via etching conditions for deep trench of silicon," Surface and Coatings Technology, vol. 171, pp. 290-295, 2003.
5. F. Marty, et al., "Advanced etching of silicon based on deep reactive ion etching for high aspect ratio microstructures and three-dimensional micro- and nanostructures," Microelectronics Journal, vol. 36, pp. 673-677, 2005.
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7. M. A. Blauw, et al., "Advanced time-multiplexed plasma etching of high aspect ratio silicon structures," J. Vac. Sci. Technol. B, vol. 20, pp. 3106-3110, 2002.
8. A. Kok, et al., "High aspect ratio deep RIE for novel 3D radiation sensors in high energy physics applications," IEEE Nuclear Science Sym. Conf. Record, 2009, pp. 1623-1627.