High aspect ratio deep RIE for novel 3D radiation sensors in high energy physics applications

IEEE Nuclear Science Symposium Conference Record

Volumn , Issue , 2009, Pages 1623-1627

  Kok, Angela ^a   Hansen, Thor Erik ^a   Hansen, Trond ^a   Jensen, Geir Uri ^a   Lietaer, Nicolas ^a   Mielnik, Michal ^a   Storås, Preben ^b  

^a SINTEF   (Norway)

^b REC Wafer AS   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

3-D-DETECTORS; DEEP REACTIVE ION ETCHING; DEEP RIE; DRIE PROCESS; HIGH ASPECT RATIO; RADIATION SENSORS; RADIATION TOLERANCES; SILICON SUBSTRATES; SILICON TECHNOLOGIES;

ELECTRON BEAM LITHOGRAPHY; HIGH ENERGY PHYSICS; NUCLEAR PHYSICS; PHOTORESISTS; PRESSURE DROP; RADIATION DETECTORS; REACTIVE ION ETCHING; SENSORS; SILICON DETECTORS; SILICON WAFERS; THREE DIMENSIONAL;

ASPECT RATIO;

EID: 77951180358     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NSSMIC.2009.5402256     Document Type: Conference Paper

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