SCOPUS 정보 검색 플랫폼

Microelectronics Reliability

Volumn 52, Issue 5, 2012, Pages 818-821

Failure modes and effects analysis for high-power GaN-based light-emitting diodes package technology

(6) Horng, Ray Hua a,b Lin, Re Ching b Chiang, Yi Chen b Chuang, Bing Han b Hu, Hung Lieh b Hsu, Chen Peng c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; CROSS-SECTION IMAGES; DESTRUCTIVE MEASUREMENTS; FAILURE FACTORS; FAILURE MODES AND EFFECTS ANALYSIS; GAN-BASED LIGHT-EMITTING DIODES; HIGH-POWER; LED CHIPS; LED DEVICE; NON-DESTRUCTIVE TEST; PACKAGE FAILURES; PACKAGE TECHNOLOGIES; RESISTANCE ANALYSIS; STRUCTURE FAILURE; THERMAL DISSIPATION; THERMAL TRANSFER ANALYSIS; THERMAL TRANSIENTS;

CAPACITANCE; COPPER; DEFECTS; FACTOR ANALYSIS; GALLIUM NITRIDE; NONDESTRUCTIVE EXAMINATION; SAFETY FACTOR; SCANNING ELECTRON MICROSCOPY;

LIGHT EMITTING DIODES;

EID: 84860384603 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/j.microrel.2011.02.021 Document Type: Article

Times cited : (35)

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