Sapphire substrate-transferred nitride-based light-emitting diode fabricated by sapphire wet etching technique

Solid-State Electronics

Volumn 50, Issue 9-10, 2006, Pages 1522-1528

  Choi, Yong Seok ^a   Kim, Seong Jin ^a  

^a Itswell Co Ltd   (South Korea)

Author keywords

GaN; LED; Sapphire; Thermal dissipation; Vertical electrode

Indexed keywords

ETCHING; GALLIUM NITRIDE; HEAT LOSSES; SAPPHIRE; SUBSTRATES; SURFACE STRUCTURE;

SAPPHIRE SUBSTRATE; THERMAL DISSIPATION; VERTICAL ELECTRODE; WET ETCHING;

LIGHT EMITTING DIODES;

EID: 33751033929     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.07.020     Document Type: Article

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