A single-photon avalanche diode in 90-nm CMOS imaging technology with 44% photon detection efficiency at 690 nm

IEEE Electron Device Letters

Volumn 33, Issue 5, 2012, Pages 694-696

  Webster, Eric A G ^a   Richardson, Justin A ^a,b   Grant, Lindsay A ^c   Renshaw, David ^a   Henderson, Robert K ^a  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

^b DIALOG SEMICONDUCTOR   (Germany)

^c STMICROELECTRONICS   (Italy)

Author keywords

Back side illumination (BSI); CMOS; Infrared; Single photon avalanche diode (SPAD)

Indexed keywords

BACK-SIDE ILLUMINATION (BSI); CMOS; CMOS IMAGING; DARK COUNT RATE; IMAGING TECHNOLOGY; NEAR INFRARED; PHOTON DETECTION EFFICIENCY; SINGLE PHOTON AVALANCHE DIODE; TIME OF FLIGHT; TIMING RESOLUTIONS; TOMOGRAPHY APPLICATIONS;

IMAGING TECHNIQUES; INFRARED RADIATION; OPTICAL COMMUNICATION; OPTICAL TOMOGRAPHY; PHOTODETECTORS;

CMOS INTEGRATED CIRCUITS;

EID: 84860380491     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2187420     Document Type: Article

References (5)

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