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Volumn 6766, Issue , 2007, Pages

A 130-nm CMOS single photon avalanche diode

Author keywords

CMOS single photon detector; Geiger mode of operation; Single photon avalanche diode; SPAD

Indexed keywords

BLOCKING PROBABILITY; CMOS INTEGRATED CIRCUITS; PASSIVE NETWORKS; PHOTODETECTORS; SEMICONDUCTOR QUANTUM WELLS;

EID: 42449106620     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.728878     Document Type: Conference Paper
Times cited : (4)

References (10)
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  • 3
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    • T. Mamamoto, Sidewall damage in a silicon substrate caused by trench etching, Applied Physics Letters, 58, no. 25, 24, pp 2942-4 June 1991.
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  • 4
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    • The analysis of dark signals in the CMOS APS imagers from the characterization of test structures
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  • 5
    • 0042768173 scopus 로고    scopus 로고
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    • A. Rochas, M. Gani, B. Furrer, P. A. Besse, R. S. Popovic, G. Ribordy, and N. Gisin, "Single photon detector fabricated in a complementary metal-oxide-semiconductor high-voltage technology", Review of Scientific Instruments, vol. 74, no. 7, pp. 3263-3270, July 2003.
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    • Rochas, A.1    Gani, M.2    Furrer, B.3    Besse, P.A.4    Popovic, R.S.5    Ribordy, G.6    Gisin, N.7
  • 6
    • 25144459393 scopus 로고    scopus 로고
    • Design and Characterization of a CMOS 3-D Image Sensor Based on Single Photon Avalanche Diodes
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    • C. Niclass A. Rochas, P.A. Besse, and E. Charbon, "Design and Characterization of a CMOS 3-D Image Sensor Based on Single Photon Avalanche Diodes", IEEE J. of Solid-State Circuits, Vol. 40, N. 9, pp. 1847-1854, Sep. 2005.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.