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Volumn 18, Issue 21, 2010, Pages 22158-22166
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A new single-photon avalanche diode in 90nm standard CMOS technology
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Author keywords
[No Author keywords available]
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Indexed keywords
AVALANCHE DIODES;
CMOS INTEGRATED CIRCUITS;
ELECTRIC FIELDS;
FLUORESCENCE;
FLUORESCENCE SPECTROSCOPY;
IMPACT IONIZATION;
JITTER;
METALLIC COMPOUNDS;
MOS DEVICES;
NANOTECHNOLOGY;
PARTICLE BEAMS;
PHOTONS;
SEMICONDUCTOR DIODES;
SILICON ON INSULATOR TECHNOLOGY;
STANDARDS;
3-D VISION;
AFTERPULSING;
COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES;
CRITICAL VALUE;
DARK COUNT RATE;
DEAD TIME;
EDGE BREAKDOWN;
FLUORESCENCE CORRELATION SPECTROSCOPY;
FLUORESCENCE LIFETIME IMAGING MICROSCOPY;
GUARD RING DESIGN;
GUARD-RINGS;
PHOTON DETECTION;
ROOM TEMPERATURE;
SINGLE PHOTON AVALANCHE DIODE;
STANDARD CMOS TECHNOLOGY;
SYSTEMATIC STUDY;
TIME OF FLIGHT;
TIME-RESOLVED;
BIAS VOLTAGE;
ALGORITHM;
ARTICLE;
COMPUTER SIMULATION;
ELECTROMAGNETIC FIELD;
FLUORESCENCE MICROSCOPY;
METHODOLOGY;
OPTICS;
PHOTON;
REPRODUCIBILITY;
SEMICONDUCTOR;
THREE DIMENSIONAL IMAGING;
X RAY;
ALGORITHMS;
COMPUTER SIMULATION;
ELECTROMAGNETIC FIELDS;
IMAGING, THREE-DIMENSIONAL;
MICROSCOPY, FLUORESCENCE;
OPTICS AND PHOTONICS;
PHOTONS;
REPRODUCIBILITY OF RESULTS;
SEMICONDUCTORS;
X-RAYS;
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EID: 78049495598
PISSN: None
EISSN: 10944087
Source Type: Journal
DOI: 10.1364/OE.18.022158 Document Type: Article |
Times cited : (60)
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References (11)
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