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Volumn 52, Issue 5, 2012, Pages 794-803

Light degradation test and design of thermal performance for high-power light-emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN CONCEPT; ELECTRO-OPTICAL; FINITE ELEMENT MODELS; FORWARD VOLTAGE; HIGH POWER LED; HIGH POWER LIGHT EMITTING DIODES; INPUT POWER; JUNCTION TEMPERATURES; LED PACKAGING; LIGHT DEGRADATION; POLLUTION REDUCTION; THERMAL PERFORMANCE;

EID: 84860363676     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.07.059     Document Type: Article
Times cited : (44)

References (14)
  • 7
    • 7044233214 scopus 로고    scopus 로고
    • Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method
    • Y. Xi, and E.F. Schubert Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method Appl Phys Lett 85 2004 2163 2165
    • (2004) Appl Phys Lett , vol.85 , pp. 2163-2165
    • Xi, Y.1    Schubert, E.F.2
  • 8
    • 40449094979 scopus 로고    scopus 로고
    • Thermal management on hot spot elimination/junction temperature reduction for high power density system in package structure
    • Vancouver, Canada
    • Chou CY, Wu CJ, Wei HP, Yew MC, Chiu CC, Chiang KN. Thermal management on hot spot elimination/junction temperature reduction for high power density system in package structure. In: ASME conference proceedings, Vancouver, Canada; 2007. p. 227-32.
    • (2007) ASME Conference Proceedings , pp. 227-232
    • Chou, C.Y.1    Wu, C.J.2    Wei, H.P.3    Yew, M.C.4    Chiu, C.C.5    Chiang, K.N.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.