Vertical InGaN light-emitting diodes with Ag paste as bonding layer

Microelectronics Reliability

Volumn 52, Issue 5, 2012, Pages 949-951

  Yang, Y C ^a   Sheu, Jinn Kong ^a,b   Lee, Ming Lun ^a,b   Hsu, Che Kang ^a   Tu, Shang Ju ^a   Liu, Shu Yen ^a   Yang, C C ^a   Huang, Feng Wen ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING LAYERS; BONDING PRESSURE; EUTECTIC BONDING; HIGHER YIELD; LOW TEMPERATURES; LOW-TEMPERATURE BONDING PROCESS; METAL BONDING; OPTICAL AND ELECTRICAL PROPERTIES; PROCESS WINDOW; SI SUBSTRATES; SOFT PROPERTY; TEST CONDITION;

BONDING; ELECTRIC PROPERTIES; EUTECTICS; GALLIUM COMPOUNDS; GOLD; LIGHT EMISSION; SILICON; SILVER; TEMPERATURE; TIN;

LIGHT EMITTING DIODES;

EID: 84860362586     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.06.067     Document Type: Article

References (9)

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