GaN/mirror/Si light-emitting diodes for vertical current injection by laser lift-off and wafer bonding techniques

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 8 A, 2004, Pages 5239-5242

  Wuu, Dong Sing ^a   Hsu, Shun Cheng ^a   Huang, Shao Hua ^a   Wu, Chia Cheng ^a   Lee, Chia En ^a   Horng, Ray Hua ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Gan; Laser lift off; Light emitting diodes; Si substrate; Vertical conductance; Wafer bonding

Indexed keywords

BONDING; ELECTRIC CONDUCTANCE; GALLIUM NITRIDE; INTERFACES (MATERIALS); LASER APPLICATIONS; MIRRORS; SAPPHIRE; SILICON WAFERS;

GAN; LASER LIFT-OFF; SI SUBSTRATES; VERTICAL CONDUCTANCE; WAFER BONDING;

LIGHT EMITTING DIODES;

EID: 6344235367     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.5239     Document Type: Article

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