|
Volumn 2, Issue , 2011, Pages 685-690
|
Stress-induced and electro-migration of electroplated copper thin film interconnections used for 3D integration
a a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
3-D INTEGRATION;
ANNEALED FILMS;
APPLIED CURRENT;
COPPER ATOMS;
CRYSTALLOGRAPHIC QUALITY;
DAMASCENE PROCESS;
ELECTRICAL RELIABILITY;
ELECTROPLATED COPPER;
ELECTROPLATED FILMS;
FAILURE RATE;
FRACTURE MODE;
HIGH THERMAL CONDUCTIVITY;
HILLOCK FORMATION;
LOCAL FUSION;
MICRO TEXTURE;
RESIDUAL TENSILE STRESS;
ROOM TEMPERATURE;
STRESS-INDUCED;
STRESS-INDUCED MIGRATION;
SULFUR ATOMS;
THROUGH-SILICON-VIA;
TIME-DEPENDENT;
ANNEALING;
ATOMS;
BRITTLE FRACTURE;
COPPER;
ELECTRIC CONDUCTIVITY;
ELECTROMIGRATION;
EXHIBITIONS;
GRAIN BOUNDARIES;
INTEGRATION;
PRINTED CIRCUIT BOARDS;
RESIDUAL STRESSES;
SEMICONDUCTOR DEVICES;
SULFUR;
THERMAL CONDUCTIVITY;
THIN FILMS;
ELECTROPLATING;
|
EID: 84860349153
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1115/IPACK2011-52058 Document Type: Conference Paper |
Times cited : (2)
|
References (6)
|