Influence of substrate on crystallographic quality of AlGaN/GaN HEMT structures grown by plasma-assisted MBE

Acta Physica Polonica A

Volumn 121, Issue 4, 2012, Pages 899-902

  Wierzbicka, A ^a   Zytkiewicz, Z R ^a   Sobanska M ^a   Klosek K ^a   Lusakowska E ^a  

^a INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SINGLE CRYSTALS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CRYSTALLOGRAPHIC QUALITY; HIGH-RESOLUTION X-RAY DIFFRACTION; PLASMA ASSISTED MBE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; STRUCTURAL PARAMETER; STRUCTURAL QUALITIES; X RAY REFLECTIVITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84860322781     PISSN: 05874246     EISSN: 1898794X     Source Type: Journal    
DOI: 10.12693/APhysPolA.121.899     Document Type: Conference Paper

References (9)

1. P.C. Khai, T. Suzue, Y. Sakai, S. Lawrence Selvaraj, T. Egawa, T. Jimbo, Phys. Stat. Sol. C 7, 1949 (2010).
2. S. Takagi, Acta Crystallogr. 15, 1311 (1962).
3. S. Takagi, J. Phys. Soc. Japan 26, 1239 (1969).
4. D. Taupin, Bull. Soc. Franc. Mineral. Cristall. 87, 469 (1964).
5. S. Corekci, M.K. Ozturk, B. Akaoglu, M. Cakmak, S. Ozcelik, E. Ozbay, J. Appl. Phys. 101, 123502 (2007).
6. L.G. Parratt, Phys. Rev. 95, 359 (1954).
7. M.A. Moram, M.E. Vickers, Rep. Prog. Phys. 72, 036502 (2009).
8. M. Leszczynski, T. Suski, J. Domagala, P. Prystawko in: Properties, processing and applications of gallium nitride and related semiconductors, INSPEC, London (1999).
9. T. Deguchi, D. Ichiryu, K. Toshikawa, K. Sekiguchi, T. Sota, R. Matsuo, T. Azuhata, J. Appl. Phys. 86, 1860 (1999).