SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 72, Issue , 2012, Pages 60-66

Electrical bistable properties of copper phthalocyanine at different deposition rates

(5) Onlaor, K a,b Tunhoo, B a,b Keeratithiwakorn, P a,b Thiwawong, T a,b Nukeaw, J a,b

a KING MONGKUT'S INSTITUTE OF TECHNOLOGY LADKRABANG (Thailand)

b THAILAND CENTER OF EXCELLENCE IN PHYSICS (Thailand)

Author keywords

Conduction mechanism; CuPc; Memory device; Organic memory

Indexed keywords

BISTABLE DEVICES; BISTABLE MEMORY DEVICES; BISTABLES; CARRIER TRAPPING; CONDUCTION MECHANISM; COPPER PHTHALOCYANINE; CRYSTALLINE SIZE; CUPC; CYCLING ENDURANCE; DATA RETENTION; DE-TRAPPING; DISLOCATION DENSITIES; ELECTRICAL BISTABLE; FINE GRAIN STRUCTURE; IMPEDANCE SPECTROSCOPY; MEMORY UNITS; ORGANIC MEMORIES; ORGANIC MEMORY DEVICES; RETENTION MEASUREMENT; STRUCTURAL DEFECT; STRUCTURAL PARAMETER; TEMPERATURE DEPENDENCE; THEORETICAL MODELS; THERMAL EVAPORATION TECHNIQUE; TRAP CENTER; XRD SPECTRA;

CARRIER TRANSPORT; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; DATA STORAGE EQUIPMENT; DEPOSITION RATES; THERMAL EVAPORATION;

ELECTRIC PROPERTIES;

EID: 84860275230 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/j.sse.2012.01.003 Document Type: Article

Times cited : (28)

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