|
Volumn 520, Issue 15, 2012, Pages 5029-5035
|
Characterization and optoelectronic properties of sol-gel-derived CuFeO 2 thin films
|
Author keywords
Annealing; Copper iron oxide; Delafossite; Sol gel deposition; Thin films; Transparent conductive oxide; X ray diffraction
|
Indexed keywords
AIR-ANNEALING;
ANNEALING TEMPERATURES;
CHEMICAL COMPOSITIONS;
DELAFOSSITE CUFEO;
DELAFOSSITES;
ELECTRICAL CONDUCTIVITY;
HALL COEFFICIENT;
HOLE CONDUCTION;
OPTOELECTRONIC PROPERTIES;
P-TYPE;
PREPARATION METHOD;
QUARTZ SUBSTRATE;
SOL-GEL DEPOSITION;
SOL-GEL PROCESSING;
THERMODYNAMIC CALCULATIONS;
TRANSPARENT CONDUCTIVE OXIDES;
TWO-STEP ANNEALING;
ACTIVATION ENERGY;
ANNEALING;
BINDING ENERGY;
COPPER COMPOUNDS;
DEPOSITION;
ELECTRIC CONDUCTIVITY;
IRON OXIDES;
PHOTOELECTRONS;
QUARTZ;
SOL-GELS;
STOICHIOMETRY;
THIN FILMS;
VAPOR DEPOSITION;
X RAY DIFFRACTION;
X RAY PHOTOELECTRON SPECTROSCOPY;
SOL-GEL PROCESS;
|
EID: 84860265959
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2012.03.032 Document Type: Article |
Times cited : (45)
|
References (25)
|