Cu contamination of the nMOSFET in a 3-D integrated circuit under thermal and electrical stress

Electrochemical and Solid-State Letters

Volumn 15, Issue 5, 2012, Pages

  Yeon, Han Wool ^a   Jung, Sung Yup ^a   Lim, Jung Ryul ^a   Pyun, Jungwoo ^b   Kim, Hyungwook ^b   Baek, Dohyun ^b   Joo, Young Chang ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATED CIRCUIT; DRAIN REGION; ELECTRIC FIELD STRESS; ELECTRICAL STRESS; INSULATION LAYERS; NMOSFET; NMOSFETS; THERMAL STRESSING;

COPPER; DIODES; ELECTRIC FIELDS; INTEGRATED CIRCUITS; THREE DIMENSIONAL;

MOSFET DEVICES;

EID: 84860213587     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.018205esl     Document Type: Article

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