Dilute nitride GaInNAs and GaInNAsSb for solar cell applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8256, Issue , 2012, Pages

  Tan, Siew Li ^a   Soong, Wai Mun ^a   Steer, Matthew J ^a,b   Zhang, Shiyong ^a   Ng, Jo Shien ^a   David, John P R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

AM1.5G; Background doping; Dilute nitride; GaInNAs; InGaAsN; Open circuit voltage; Photodiodes; Quantum efficiency; Short circuit current; Solar cells; Thermal annealing

Indexed keywords

AM1.5G; DILUTE NITRIDES; GAINNAS; INGAASN; THERMAL-ANNEALING;

ENERGY GAP; MOLECULAR BEAM EPITAXY; OPEN CIRCUIT VOLTAGE; PHOTODIODES; PHOTONIC DEVICES; PHOTOVOLTAIC EFFECTS; QUANTUM EFFICIENCY; SHORT CIRCUIT CURRENTS; SOLAR CELLS;

GALLIUM NITRIDE;

EID: 84860010919     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.910349     Document Type: Conference Paper

References (14)

1. Yuen, H., "High Efficiency Solar Cells at Solar Junction," Renewable Energy and the Environment, OSA Technical Digest (CD), paper SRWB3 (2011).
2. Kondow, M., Uomi, K., Niwa, A., Kitatani, T., Watahiki, S. and Yazawa, S., "GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance," Jpn. J. Appl. Phys. 35, 1273-1275 (1996).
3. Friedman, D. J., Geisz, J. F., Kurtz, S. R. and Olson, J. M., "1-eV solar cells with GaInNAs active layer," J. Cryst. Growth 195, 409-415 (1998). (Pubitemid 128409107)
4. Kurtz, S .R., Allerman, A. A., Jones, E. D., Gee, J. M., Banas, J. J. and Hammons, B. E., "InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs," Appl. Phys. Lett. 74, 729-731 (1999). (Pubitemid 129615163)
5. Kurtz, S. and Geisz, J., "Multijunction solar cells for conversion of concentrated sunlight to electricity," Opt. Express 18, A73-A78 (2010).
6. Jackrel, D. B., Bank, S. R., Yuen, H. B., Wistey, M. A., Harris Jr., J. S., Ptak, A. J., Johnston, S. W., Friedman, D. J. and Kurtz, S. R., "Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy," J. Appl. Phys. 101, 114916 (2007).
7. Ng, J., Soong, W. M., Steer, M. J., Hopkinson, M., David, J. P. R., Chamings, J., Sweeney, S. J. and Adams, A. R., "Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs," J. Appl. Phys. 101, 064506-6 (2007).
8. Tan, S. L., Tan, L. J. J., Goh, Y. L., Zhang, S., Ng, J. S., David, J. P. R., Marko, I. P., Allam, J., Sweeney, S. J. and Adams, A. R., "Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing," Proc. SPIE 7726, 77261M (2010).
9. Tan, S. L., Zhang, S., Soong, W. M., Goh, Y. L., Tan, L. J. J., Ng, J. S., David, J. P. R., Marko, I. P., Adams, A. R., Sweeney, S. J. and Allam, J., "GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications," IEEE Electron Device Lett. 32, 919-921 (2011).
10. Knechtli, R. C., Loo, R. Y. and Kamath, G. S., "High-efficiency GaAs solar cells," IEEE Trans. Electron Devices 31, 577-588 (1984).
11. Zemel, A. and Gallant, M. "Current-voltage characteristics of metalorganic chemical vapor deposition InP/InGaAs p-i-n photodiodes: The influence of finite dimensions and heterointerfaces," J. Appl. Phys. 64, 6552-6561 (1988).
12. Ptak, A. J., Friedman, D. J. and Kurtz, S, "Effects of temperature, nitrogen ions, and antimony on wide depletion width GaInNAs," J. Vac. Sci. Technol. B 25, 955-959 (2007). (Pubitemid 46876605)
13. King, R. R., Sherif, R. A., Kinsey, G. S., Kurtz, S., Fetzer, C. M., Edmondson, K. M., Law, D. C., Cotal, H. L., Krut, D. D., Ermer, J. H. and Karam, N. H., "Bandgap Engineering in High-Efficiency Multijunction Concentrator Cells," Proc. Int. Conf. on Solar Concentrators for the Generation of Electricity or Hydrogen, NREL/CD-520-38172 (2005).
14. 1-y Solar Cells," 31st IEEE Photovoltaic Specialists Conf., 707-710 (2005). (Pubitemid 41667882)