Physical origins of nonlinearity in InP double heterojunction bipolar transistors

Applied Physics Letters

Volumn 100, Issue 11, 2012, Pages

  Xu, H ^a   Iverson, E W ^a   Cheng, K Y ^a   Feng, M ^a  

^a United States of America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE ACCUMULATION; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; ENERGY-BAND ALIGNMENT; HIGH CURRENT DENSITIES; INP; INP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; NON-LINEARITY; PUSH-OUT; TWO-DIMENSIONAL HYDRODYNAMICS;

BAND STRUCTURE;

ALIGNMENT;

EID: 84859986438     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3694285     Document Type: Article

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