Graded base type-II InP/GaAsSb DHBT with fT = 475 GHz

IEEE Electron Device Letters

Volumn 27, Issue 2, 2006, Pages 84-86

  Snodgrass, William ^a   Wu, Bing Ruey ^a   Hafez, Walid ^a   Cheng, Keh Yung ^a   Feng, Milton ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

Heterojunction bipolar transistors (HBTs)

Indexed keywords

COMPOSITION; EXTRAPOLATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL CONDUCTIVITY;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR (DHBT); GRADED BASE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 31544453912     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.862673     Document Type: Article

References (13)

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