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Nanoscale

Volumn 4, Issue 9, 2012, Pages 2962-2967

Tunable bands in biased multilayer epitaxial graphene

(4) Williams, Michael D a Samarakoon, Duminda K a Hess, Dennis W b Wang, Xiao Qian a

a CLARK ATLANTA UNIVERSITY (United States)

b Georgia Institute of Technology (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; DENSITY-OF-STATES; DEVICE APPLICATION; ELECTRIC BIAS; ELECTRONIC BAND STRUCTURE; ELECTRONIC CHARACTERISTICS; EPITAXIAL GRAPHENE; FIRST-PRINCIPLES; INTERLAYER COUPLING; THEORETICAL RESULT; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY; VAN DER WAALS INTERACTIONS;

ELECTRONIC STRUCTURE; GRAPHENE; MULTILAYERS; PHOTOELECTRON SPECTROSCOPY; SILICON CARBIDE; VAN DER WAALS FORCES;

EPITAXIAL GROWTH;

EID: 84859853290 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c2nr11991a Document Type: Article

Times cited : (18)

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