Low-temperature and pressureless Ag-Ag direct bonding for light emitting diode die-attachment

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 2, Issue 4, 2012, Pages 548-552

  Kuramoto, Masafumi ^a   Kunimune, Teppei ^a   Ogawa, Satoru ^a   Niwa, Miki ^b   Kim, Keun Soo ^c   Suganuma, Katsuaki ^c  

^a NICHIA CORPORATION   (Japan)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Die bonding; light emitting diode; pressureless; silver; sintering

Indexed keywords

ABNORMAL GRAIN GROWTH; AG PARTICLES; BONDING LAYERS; BONDING STRENGTH; CONTACT SURFACE; DIE BONDING; DIE-ATTACH MATERIALS; DIRECT BONDING; GLASS SUBSTRATES; LOW TEMPERATURES; LOW-TEMPERATURE SINTERING; MORPHOLOGY CHANGES; NANOMETER SIZE; OXYGEN ADSORPTION; OXYGEN CONCENTRATIONS; PRESSURELESS; SINTERING ATMOSPHERES; SPUTTERED LAYERS; SPUTTERED SURFACES;

DIFFUSION BONDING; DIODES; DISPERSIONS; GAS ADSORPTION; GRAIN GROWTH; LIGHT EMISSION; LIGHT EMITTING DIODES; MICROMETERS; MORPHOLOGY; OXYGEN; SINTERING; SUBSTRATES; SURFACES; TEMPERATURE; THICKNESS MEASUREMENT;

SILVER;

EID: 84859786412     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2011.2180385     Document Type: Article

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