Die bonding for a nitride light-emitting diode by low-temperature sintering of micrometer size silver particles

IEEE Transactions on Components and Packaging Technologies

Volumn 33, Issue 4, 2010, Pages 801-808

  Kuramoto, Masafumi ^a   Ogawa, Satoru ^a   Niwa, Miki ^b   Kim, Keun Soo ^c   Suganuma, Katsuaki ^c  

^a NICHIA CORPORATION   (Japan)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Bonding; conducting materials; light emitting diodes; mass spectroscopy; oxygen packaging; reliability

Indexed keywords

AG PARTICLES; CONDUCTING MATERIALS; DIE ATTACH; DIE BONDING; ELECTRONIC COMPONENT; HIGH TEMPERATURE; LOW-TEMPERATURE SINTERING; MASS SPECTROSCOPY; MICROMETER SIZES; OXYGEN ADSORPTION; POROUS LAYERS; SILVER PARTICLES; THERMAL RESISTANCE;

DIES; DIODES; GAS ADSORPTION; LEAD; LIGHT EMISSION; MASS SPECTROMETERS; MASS SPECTROMETRY; MICROMETERS; NITRIDES; OXYGEN; PACKAGING MATERIALS; RELIABILITY; SILVER; SINTERING; SOLDERING;

LIGHT EMITTING DIODES;

EID: 78651103851     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAPT.2010.2064313     Document Type: Article

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