Effect of precursor supply on (100) and (001) orientations of α-Al2O3 film prepared by laser CVD

Key Engineering Materials

Volumn 508, Issue , 2012, Pages 3-6

  Hokuto, Kadokura ^a   Ito, Akihiko ^a   Kimura, Teiichi ^a   Goto, Takashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Orientation

Indexed keywords

ALUMINUM OXIDE; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; DEPOSITION RATES; FILM PREPARATION; FLOW OF GASES;

AL2O3 FILMS; EVAPORATION TEMPERATURE; GRAIN SIZE; LASER CHEMICAL VAPOR DEPOSITION; LASER CVD; OXYGEN GAS FLOW; PRECURSOR SUPPLY;

ALUMINA;

EID: 84859714474     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/KEM.508.3     Document Type: Conference Paper

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