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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 10, 2001, Pages 6081-6087

Defect structure of heteroepitaxial SnO2 thin films grown on TiO2 substrates

(4) Wakabayashi, H a Suzuki, T a Iwazaki, Y a Fujimoto, M a

a TAIYO YUDEN CO LTD (Japan)

Author keywords

Crystallographic shear structure; Heteroepitaxy; Misfit dislocation; Rutile; SnO2

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPRESSIVE STRESS; CRYSTAL DEFECTS; FILM GROWTH; MORPHOLOGY; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SINGLE CRYSTALS; SURFACES; THIN FILMS; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY;

BURGERS VECTORS; DEFECT STRUCTURE; HETEROEPITAXIAL TIN DIOXIDE THIN FILMS; HIGH DENSITY INTERFACIAL MISFIT DISLOCATIONS; RUTILE;

TIN COMPOUNDS;

EID: 0035484421 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.6081 Document Type: Article

Times cited : (21)

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