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Volumn 100, Issue 13, 2012, Pages

Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier

(10) He, Shumin a Bai, Hongliang a Liu, Guolei a Li, Qiang a Yan, Shishen a Chen, Yanxue a Mei, Liangmo a Liu, Houfang b Wang, Shouguo b Han, Xiufeng b

a SHANDONG UNIVERSITY (China)

b INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

JUNCTION RESISTANCES; LOCALIZED STATE; MAGNETIC TUNNEL JUNCTION; MG-DOPED; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POSITIVE TUNNEL MAGNETORESISTANCES; POWER LAW; SPIN INJECTION; TUNNEL MAGNETORESISTANCE; ZERO MAGNETIC FIELDS; ZNO;

ELECTRIC RESISTANCE; EPITAXIAL GROWTH; MAGNETIC DEVICES; MAGNETIC FIELDS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY;

ZINC OXIDE;

EID: 84859551772 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3698151 Document Type: Article

Times cited : (12)

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